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Proceedings Paper

In-Situ Rapid Isothermal Processing Of II-A Fluorides On Compound Semiconductors
Author(s): R. Singh; F. Radpour; J. Narayan
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Paper Abstract

We have developed a new technique for the realization of dielectric films (II-A fluorides and their mixtures) on corn-pound semiconductors. In this process, dielectric films are deposited in an e-beam system at room temperature and subsequently subjected to in-situ rapid isothermal annealing by using incoherent light sources incorporated in the e-beam system. In this paper, preliminary results of electrical and structural characteristics of CaF2 and CazSri-xF2 films on GaAs and InP are presented.

Paper Details

Date Published: 15 August 1988
PDF: 6 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947380
Show Author Affiliations
R. Singh, University Of Oklahoma (United States)
F. Radpour, University Of Oklahoma (United States)
J. Narayan, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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