Proceedings Paper
Status Of Fluoride-Semiconductor Heteroepitaxial Growth| Format | Member Price | Non-Member Price |
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Paper Abstract
Molecular beam epitaxy of structures associating alkaline-earth fluorides and semiconductors has received considerable attention in the last few years. In this paper, we review the results published paying special attention to structures associating Ca, Sr, Ba fluorides and Si, GaAs, InP semiconductors. General trends for fluoride/semiconductor growth behavior are emphasized, as well as the problems encountered in the growth of semiconductor/fluoride heterostructures.
Paper Details
Date Published: 15 August 1988
PDF: 9 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947378
Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)
PDF: 9 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947378
Show Author Affiliations
Antonio Munoz-Yague, Laboratoire d'Automatique et d'Analyse des Systemes du CNRS (France)
Chantal Fontaine, Laboratoire d'Automatique et d'Analyse des Systemes du CNRS (France)
Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)
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