Share Email Print

Proceedings Paper

CdTe Epilayers On (111) GaAs Grown By Hot-Wall Epitaxy
Author(s): Koji Shinohara; Yoshito Nishijima; Hiroji Ebe; Osamu Ueda
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Epitaxial thin layer marcury-cadmium telluride has recently become the most widely used infrared ckector material. For epitaxial growth, cadmium telluride is usually used as a substrate(1). Unfortunately, bulk cadmium telluride tends to twin, therefore large single crystals are difficult and expensive to preparA, It is hoped that GaAs with a CdTe buffer layer will be suitable for use as a substrate(2). We have investigated (111) CdTe growth on B facet of (111) GaAs by hot-wall epitaxy and evaluated the quality of the wafer. In this paper, first the introduction of the main feature of hot-wall epitaxial growth is shown. Next, the growth conditions of CdTe on GaAs is denoted. After presenting the evaluation results, this paper is summarized.

Paper Details

Date Published: 15 August 1988
PDF: 7 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947372
Show Author Affiliations
Koji Shinohara, Fujitsu Laboratories Ltd (Japan)
Yoshito Nishijima, Fujitsu Laboratories Ltd (Japan)
Hiroji Ebe, Fujitsu Laboratories Ltd (Japan)
Osamu Ueda, Fujitsu Laboratories Ltd (Japan)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?