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Proceedings Paper

Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation
Author(s): S. V. Ghaisas; A. Madhukar
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Paper Abstract

The influence of the lattice mismatch strain on the growth mode and formation of defects is examined via computer simulations. Striking differences in the growth mode are suggested for compressive versus tensile strain in the overlayer. It is proposed and shown that the genesis of misfit induced defects is laid in the initial stages of growth at the coalescence boundaries of kinetically controlled clusters exceeding a critical size needed for epitaxical registry.

Paper Details

Date Published: 15 August 1988
PDF: 16 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947348
Show Author Affiliations
S. V. Ghaisas, University of Southern California (United States)
A. Madhukar, University of Southern California (United States)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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