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Proceedings Paper

Long Wavelength Infrared Detectors Based On Intersubband Absorption And Tunneling In Doped Multiquantum Well Superlattices
Author(s): B. F. Levine
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Paper Abstract

We have recently demonstrated novel high responsivity 8-12 μm detectors (comparable to HgCdTe) based on intersubband absorption and photoexcited tunneling in doped multiquantum well superlattices of GaAs/AlGaAs. These detectors have the potential advantage over HgCdTe of a more mature materials and processing technology and the possibility of direct integration with high performance GaAs FETs. In this talk we will discuss the detailed physics and device operation of these detectors, as well as our newest results indicated below.

Paper Details

Date Published: 18 August 1988
PDF: 4 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947290
Show Author Affiliations
B. F. Levine, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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