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Proceedings Paper

Quantum Transport For Bloch Electrons In Inhomogeneous Electric Fields
Author(s): Gerald J. Iafrate; Joseph B. Krieger
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Paper Abstract

A novel formalism for treating Bloch electron dynamics and quantum transport in inhomogeneous electric fields of arbitrary strength and time dependence is presented. In this formalism, the electric field is described through the use of the vector potential. This choice of gauge leads to a natural set of basis functions for describing Bloch electron dynamics; in addition, a basis set of localized, electric field-dependent Wannier functions are established and utilized to derive a quantum "Boltzmann equation" which includes explicit band-mixing transients such as effective mass dressing and Zener tunneling. The applications of this formalism to quantum transport in spatially localized inhomogeneous electric fields such as occur in problems involving tunneling through "band-enginereed" tunneling barriers and impurity scattering are discussed.

Paper Details

Date Published: 22 August 1988
PDF: 5 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947193
Show Author Affiliations
Gerald J. Iafrate, U.S. Army Electronics Technology and Devices Laboratory (United States)
Joseph B. Krieger, City University of New York-Brooklyn College (United States)

Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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