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Proceedings Paper

Ultrafast Relaxation Of Hot Photoexcited Carriers In GaAs
Author(s): David K. Ferry; Ravindra P. Joshi; Meng-Jeng Kann
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Paper Abstract

In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and X valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.

Paper Details

Date Published: 22 August 1988
PDF: 8 pages
Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947187
Show Author Affiliations
David K. Ferry, Arizona State University (United States)
Ravindra P. Joshi, Arizona State University (United States)
Meng-Jeng Kann, Arizona State University (United States)

Published in SPIE Proceedings Vol. 0942:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II
Robert R. Alfano, Editor(s)

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