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Proceedings Paper

Stable, High Quantum Efficiency Silicon Photodiodes For Vacuum-UV Applications
Author(s): Raj Korde; L.Randall Canfield; Brad Wallis
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Paper Abstract

Silicon photodiodes have been developed by defect-free phosphorus diffusion having practically no carrier recombination at the Si-SiO2 interface or in the front diffused region. The quantum efficiency of these photodiodes was found to be around 120% at 100 nm. Unlike the previously tested silicon photodiodes, the developed photodiodes exhibit extremely stable quantum efficiency over extended periods of time. Currently, we are investigating the possibility of using these photodiodes as vacuum ultraviolet detector standards.

Paper Details

Date Published: 16 August 1988
PDF: 8 pages
Proc. SPIE 0932, Ultraviolet Technology II, (16 August 1988); doi: 10.1117/12.946887
Show Author Affiliations
Raj Korde, United Detector Technology (United States)
L.Randall Canfield, National Bureau of Standards (United States)
Brad Wallis, Jet Propulsion Laboratory (United States)

Published in SPIE Proceedings Vol. 0932:
Ultraviolet Technology II
Robert E. Huffman, Editor(s)

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