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Proceedings Paper

Analog, Digital And Short Pulse Modulation Of Ultrafast Gallium Aluminum Arsenide Semiconductor Lasers
Author(s): K. Y. Lau; A. Yariv
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Paper Abstract

Semiconductor lasers are potentially devices of great importance for optical transmission as well as short pulse generation for various sampling, characteration and dispersion measurements. Since semiconductor lasers are currently driven devices, it is relatively easy to modulate the optical output and to generate short pulses, on the order of lOps long, by directly modulating the injection current into the laser. This paper will present some recent developments in injection lasers which are capable of being analog or digitally mod-ulated at rates up to lOGHz, as well as generating short optical pulses at repetition rates from several hundred megahertz to tens of gigahertz.

Paper Details

Date Published: 2 April 1985
PDF: 4 pages
Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); doi: 10.1117/12.946547
Show Author Affiliations
K. Y. Lau, Ortel Corporation (United States)
A. Yariv, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0533:
Ultrashort Pulse Spectroscopy and Applications
M. J. Soileau, Editor(s)

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