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Proceedings Paper

Spatial And Temporal Resolution Of The Nonlinear Optical Properties And Melt Dynamics Of Si At 1 m
Author(s): Arthur L. Smirl; Thomas F. Boggess; Ian W. Boyd; Steven C. Moss; K. Bohnert; Kamjou Mansour
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Paper Abstract

We have recently demonstrated a passive, picosecond, Si optical-limiting switch for 1 micron radiation. Since this device functions below, at, and above the Si melting threshold, its operating characteristics are determined by a large number of mechanisms including nonlinear transmission, self-diffraction, nonlinear reflection, phase transitions, and resolidification morphologies. Here, we review measurements in which we apply a wide variety of picosecond spectroscopic techniques in order to characterize these optically-induced phenomena.

Paper Details

Date Published: 2 April 1985
PDF: 14 pages
Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); doi: 10.1117/12.946545
Show Author Affiliations
Arthur L. Smirl, North Texas State University (United States)
Thomas F. Boggess, North Texas State University (United States)
Ian W. Boyd, North Texas State University (United States)
Steven C. Moss, North Texas State University (United States)
K. Bohnert, North Texas State University (United States)
Kamjou Mansour, North Texas State University (United States)

Published in SPIE Proceedings Vol. 0533:
Ultrashort Pulse Spectroscopy and Applications
M. J. Soileau, Editor(s)

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