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Proceedings Paper

Buried Oxide Formation By Ion Implantation
Author(s): K. Steeples; M. A. Guerra
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Paper Abstract

High power oxygen ion beams have been used to produce a buried insulating layer in silicon wafers. Standard materials analysis techniques show that a thermally stable insulating layer is formed beneath the single crystal surface layer of silicon, serving to isolate the surface from the substrate.

Paper Details

Date Published: 9 April 1985
PDF: 4 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985);
Show Author Affiliations
K. Steeples, Eaton Corporation (United States)
M. A. Guerra, Eaton Corporation (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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