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Proceedings Paper

Ultra-High-Resolution Dose Uniformity Monitoring With Thermal Waves
Author(s): W.Lee Smith; Michael W. Taylor; John Schuur
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Paper Abstract

We demonstrate the ability of thermal-wave techniques to nondestructively measure ion-implanted dose and dose uniformity on the same spatial scale as the implanted features of micro-electronic devices. We present results on the variation of the thermal-wave signal with implanted dose, ion energy, surface oxide thickness, and silicon substrate resistiv-ity. We demonstrate ion dose measurements over the 1011 -1015 ions/cm2 range, automatic wafer mapping of ion dose uniformity, and measurement of dose variations on actual integrated circuit features. The attributes of this measurement technique make it particularly suited for production monitoring of ion implantation, especially in the critical threshold-voltage-adjust implant regime.

Paper Details

Date Published: 9 April 1985
PDF: 14 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946488
Show Author Affiliations
W.Lee Smith, Therma-Wave, Inc. (United States)
Michael W. Taylor, Therma-Wave, Inc. (United States)
John Schuur, VLSI Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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