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Proceedings Paper

Experimental Investigations On The Oxidation Of Cobalt Disilicide(CoSi[sub]2[/sub])
Author(s): SJ. Kim; T. C. Banwell; R. Shima; M. A. Nicolet
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Paper Abstract

When a film of CoSi2 on a SiO2 substrate is thermally annealed in an oxidizing ambient in the temperature range, 750 - 1000°C, a SiO2 layer grows on the surface by depleting the film of its Si. As a result, the chemical composition of the film passes through a sequence of silicides with increasing metal content. The film also breaks up into islands. This morphological instability is observed also for pure Co film on SiO2 when annealed in vacuum. We show that less than 10 atomic percent of Si, or higher, in Co suppresses this instability under vacuum annealing. The oxidation of a CoSi2 film on a Si <111> substrate establishes that the displacement of Si atoms against Co atoms in the silicide does not create a morphological instability. The irradiation of a film on SiO2 prior to oxidation by Kr ions whose range is commensurate with the thickness of the film can partly suppress this instability during oxidation under certain circumstances.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946481
Show Author Affiliations
SJ. Kim, California Institute of Technology (United States)
T. C. Banwell, California Institute of Technology (United States)
R. Shima, California Institute of Technology (United States)
M. A. Nicolet, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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