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Proceedings Paper

Investigation Of Formation Kinetics Of CrSi[sub]2[/sub], TaSi[sub]2[/sub] And Pt[sub]2[/sub]Si By Ion Beam Mixing
Author(s): Frank C.T. So; Uri Shreter; Marc A. Nicolet
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Paper Abstract

Bilayers of Si/metal (metal on top) and metal/Si (Si on top) were annealed in vacuum to produce the Si/silicide/metal and metal/silicide/Si configurations, respectively. The sandwich structures were then irradiated with Xe ions of energies ranging from 125 to 300 keV such that the Xe ions traverse only one of the two interfaces (metal-silicide or silicide-Si). In the case of CrSi2, irradiation above 150°C induces further and laterally uniform growth of a stoichiometric layer of silicide, but only when the Cr/CrSi2 interface is traversed, not when the other interface is traversed. We conclude that the formation of CrSi2 is an interface-limited process, which is consistent with the linear time dependence of the growth of CrSi2 under thermal annealing, and that the limiting reaction occurs at the Cr/ CrSi2 interface. On the other hand, in TaSi2 for temperatures up to 500°C, and in Pt2Si at room temperature, Xe ions penetrating through only one of either of the two interfaces does not induce silicide growth in a layer-by-layer fashion. This observation is consistent with the fact that under thermal annealing, the growth of Pt2Si is a diffusion-controlled process. The absence of further growth of TaSi2 is attributed to unidentified processes which control the formation of the silicide.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946480
Show Author Affiliations
Frank C.T. So, California Institute of Technology (United States)
Uri Shreter, California Institute of Technology (United States)
Marc A. Nicolet, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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