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Proceedings Paper

PREDICT - A New Design Tool For Shallow Junction Processes
Author(s): R. B. Fair; R. Subrahmanyan
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Paper Abstract

A new one-dimensional, process estimator for the design of IC technologies (PREDICT) has been developed which rigorously solves coupled equations describing dopant behavior under modern processing conditions. All of the models in PREDICT have been verified with extensive experimental measurements. Such models include a new ion implantation algorithm with empirical parameters to describe the exponential tail formed through ion channeling, rapid thermal diffusion of B, As and P, accurate oxidation calculations including the effects of pressure, HC1 and doping concentrations, effects of stress and dopant precipitation and clustering, ion pairing, implantation through deposited or grown films (oxide, polysilicon, nitride), concentration effects, etc. PREDICT has been used to do accurate simulations of high dose B and BF2 implants/diffusions in both <100> and <111> Si. Considerations in these calculations include channeling during implantation, the effects of pre-amorphization, damage-induced dislocation networks and the enhanced diffusion of B outside of these networks, and precipitation of B using a 12 atom cluster model.

Paper Details

Date Published: 9 April 1985
PDF: 9 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946472
Show Author Affiliations
R. B. Fair, Microelectronics Center of North Carolina (United States)
R. Subrahmanyan, Duke University (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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