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Proceedings Paper

Characteristics Of SiO[sub]2[/sub] Films Deposited By Ionized Nozzle-Beam Technique
Author(s): J. Wong; T.-M. Lu; R. Stump; S. Mehta
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Paper Abstract

SiO2 films have been deposited on Si wafers at a substrate temperature of 300°C and a pressure of 10-2 Pa using the Ionized Nozzle-Beam Deposition (INBD) technique. SiO grains were used as the deposition material. The refractive index and infrared absorption spec-trum of the deposited SiO 0 films resembled to those of the SiO2 films deposited using SiO2 as the source material. We found that the film quality was improved significantly after a short time furnace annealing (800°C, 10 minutes).

Paper Details

Date Published: 9 April 1985
PDF: 4 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946471
Show Author Affiliations
J. Wong, Rensselaer Polytechnic Institute (United States)
T.-M. Lu, Rensselaer Polytechnic Institute (United States)
R. Stump, Eaton Corporation (United States)
S. Mehta, Eaton Corporation (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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