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Proceedings Paper

Ionized Clusters: A Technique For Low Energy Ion Beam Deposition
Author(s): I. Yamada; T. Takagi; P. R. Younger; J. Blake
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Paper Abstract

Ionized cluster Beams (ICB) are widely used to deposit metal, semiconductor and insulating films. The paper describes the current state of this technology in both fundamental and applications areas. One important ambiguity in the theory of metal cluster formation is addressed. RBS is used to measure the extent of any displacement of surface atoms caused by ICB. The minimal amount of such surface damage is confirmed by the close-to-ideal values measured for Schottky barrier height on an Al/Si interface. Several examples of ICB application are described.

Paper Details

Date Published: 9 April 1985
PDF: 9 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946470
Show Author Affiliations
I. Yamada, Kyoto University (Japan)
T. Takagi, Kyoto University (Japan)
P. R. Younger, Eaton Ion Materials Systems (United States)
J. Blake, Eaton Ion Materials Systems (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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