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Proceedings Paper

MeV Implantation Of N-Type Dopants Into GaAs
Author(s): Phillip E. Thompson; Harry B. Dietrich; Michael Spencer; David C. Ingram
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Paper Abstract

Implantation into GaAs of n-type dopants having energies of 1 MeV or greater has been investigated. The resulting carrier profiles have been studied with an electrolytic CV technique and with Hall measurements. It was found that MeV Si implantation maybe used to form well defined n-layers in GaAs. Anneal temperatures of 800°C to 850°C are adequate for activation of fluences of 5x1013/cm2 or less for 1 MeV Si. For a fluence of lx1014 Si/cm2 an anneal temperature of 900°C must be used to prevent the formation of a surface p-type layer. MeV S implantation was found to form diffuse 2-layers. When 1 MeV Si and 1.25 MeV S were co-implanted, both with a fluence of lx10/cm2, an n-layer was formed wila anneal temperatures as low as 800°C. At 900°C, a peak carrier concentration of 2x101°/cm3 was achieved. 6 MeV Si produces a buried n-layer with a carrier concentration maximum at 3.0 μm. Uniform deep implants have been activated having carrier concentrations as low as 2x10 16/cm3 with a mobility of 5500 cm2/V's.

Paper Details

Date Published: 9 April 1985
PDF: 7 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946465
Show Author Affiliations
Phillip E. Thompson, Naval Research Laboratory (United States)
Harry B. Dietrich, Naval Research Laboratory (United States)
Michael Spencer, Naval Research Laboratory (United States)
David C. Ingram, Universal Energy Systems (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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