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Proceedings Paper

MeV Implantation In The III-V's
Author(s): H. B. Dietrich
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Paper Abstract

MeV implantation has a number of potential device and IC applications in both Si and the III-V's. Some of these have already begun to be realized in the Si technology. The development of III-V applications is, however, in a more embryonic stage. The primary thrust in the III-V's is toward increasing the range of devices which can be made by direct ion im-plantation to increase the level of device integration which can be attained. This paper will contrast the III-V technology with the Si, outline some of the potential applications for MeV implantation in the III-V's and discuss the basic research areas in which progress must be made in order to increase the use of MeV implantation in the III-V device and IC technology.

Paper Details

Date Published: 9 April 1985
PDF: 5 pages
Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); doi: 10.1117/12.946464
Show Author Affiliations
H. B. Dietrich, Naval Research Laboratory (United States)

Published in SPIE Proceedings Vol. 0530:
Advanced Applications of Ion Implantation
Michael I. Current; Devindra K. Sadana, Editor(s)

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