Share Email Print

Proceedings Paper

Laser Induced Phase Transition Of Several Semiconductor Compounds
Author(s): Gan Fuxi; Wang Hao
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In recent years, we have systematically studied amorphous layer formation of III-V semi-conductor compounds irradiated by pulsed laser light. In this paper the study on the phase transition of semiconductor compounds and multicomponent alloys was reported. The optical properties of materials during phase transition were measured. The surface morphology,transition temperature and laser threshold power were also determined. A dynamic model for surface cooling and phase transition was proposed. The stability of amorphous layer were investigated in detail. The possibility of using these materials for reversible optical disc was discussed.

Paper Details

Date Published: 12 April 1985
PDF: 4 pages
Proc. SPIE 0529, Optical Mass Data Storage I, (12 April 1985); doi: 10.1117/12.946431
Show Author Affiliations
Gan Fuxi, Shanghai Institute of Optics and Fine Mechanics (United States)
Wang Hao, Shanghai Institute of Optics and Fine Mechanics (United States)

Published in SPIE Proceedings Vol. 0529:
Optical Mass Data Storage I
Robert A. Sprague, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?