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Proceedings Paper

High Resolution Trilayer Electron Beam Resist System Employing P[Mma/Maa] And Reliable Reactive Ion Etch Processes
Author(s): Thomas C. Mele; Asanga H Perera; J.Peter Krusius
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Paper Abstract

A high resolution trilayer resist system based on the copolymer e-beam resist P[MMA/MAA], an SiO2 interlayer, and a polyimide base layer will be described. High resolution reactive ion etch processes have been developed that minimize base layer undercut and provide for cleanly patterned windows for 150 nm thick aluminum lift-off. Residue formation on the base layer sidewalls after reactive ion etching has been found to depend on the substrate film composition. Linewidth variations as a function of exposure dose, development time, and reactive ion etch conditions will be discussed. The extent to which trilayer stencils can be used for high resolution reversal processes has been found to be limited by the polyimide thickness required for planarization and proximity effect reduction, aluminum film thickness required, and the minimum line space desired.

Paper Details

Date Published: 14 June 1988
PDF: 7 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945653
Show Author Affiliations
Thomas C. Mele, Cornell university (United States)
Asanga H Perera, Cornell University (United States)
J.Peter Krusius, Cornell University (United States)

Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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