Proceedings Paper
Ultrathin MBE-Grown Semiconductor Layer Masks For Focused Ga-Ion Beam Lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
The application of thin semiconductor layers as etch masks for high vacuum lithography is described. Heteroepitaxial layers of In0.53 Ga0.47 As or InP, as thin as 30Å, were grown by molecular beam epitaxy and patterned using a focused beam of Ga ions. The patterned thin layer is then used as a mask for deep, material selective etching. This combination of molecular beam epitaxy and efficient precise patterning techniques is expected to result in a new flexibility in design and fabrication of semiconductor devices.
Paper Details
Date Published: 14 June 1988
PDF: 4 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945638
Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)
PDF: 4 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945638
Show Author Affiliations
L R Harriott, AT&T Bell Laboratories (United States)
H Temkin, AT&T Bell Laboratories (United States)
H Temkin, AT&T Bell Laboratories (United States)
M B Panish, AT&T Bell Laboratories (United States)
Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)
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