Share Email Print

Proceedings Paper

Incoherent GaAlAs/GaAs Semiconductor Laser Arrays
Author(s): C J Hwang; J S Chen; R J Fu; D H Wu; C S Wang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Phase-locked operation of an array of semiconductor lasers has been extensively studied in recent years [1-12] with the eventual goal of obtaining high power (several hundreds of milliwatts) into a single spatial lobe of radiation. Earlier, the studies were concentrated on the integration of two types of lasers, namely, gain guided [1,2,5,6,] and index guided [7] stripe geometry lasers into an array with different stripe widths and varied spacing between the stripes. Phase lock of these lasers can only be achieved with a proper combination of width, stripe spacing and driving current. A considerable amount of interest has since been focused on the study of conditions under which a single spatial mode with narrow divergence angle can be produced. At present there is no reproducible process that can be used to fabricate single lobe phase-locked semiconductor arrays. The main application of the semiconductor array now is to pump solid state lasers. In this case we do not require phase locking or single lobe far field. In this paper we report fabrication of a different kind of semiconductor laser array, i.e. incoherent laser array. The main features of the incoherent laser arrays are : 1) Low threshold index-guided laser elements, 2) Single lobe far-field pattern, 3) Low astigmatism, 4) Low current operation, 5) Densely packed and 6) Total electrical and optical isolation. We expect such laser arrays will have important applications in multi-head optical-disk reading and writing, multi-fiber optical communications and line of sight communications.

Paper Details

Date Published: 9 August 1988
PDF: 5 pages
Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944348
Show Author Affiliations
C J Hwang, General Optronics Corp (United States)
J S Chen, General Optronics Corp (United States)
R J Fu, General Optronics Corp (United States)
D H Wu, General Optronics Corp (United States)
C S Wang, General Optronics Corp (United States)

Published in SPIE Proceedings Vol. 0893:
High Power Laser Diodes and Applications
Luis Figueroa, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?