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Proceedings Paper

Gaas-Alas Monolithic Microresonator Arrays
Author(s): J L Jewell; A Scherer; S L McCall; A C Gossard; J H English
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Paper Abstract

Monolithic optical logic devices 1.5-5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry-Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (factor 30 smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3-μm center-center spacing, <200 ps recovery time and thermal stability at 82 MHz operating frequency. All experiments were performed at room temperature.

Paper Details

Date Published: 3 May 1988
PDF: 3 pages
Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944060
Show Author Affiliations
J L Jewell, AT&T Bell Laboratories (United States)
A Scherer, Bell Communications Research (United States)
S L McCall, AT&T Bell Laboratories (United States)
A C Gossard, AT&T Bell Laboratories (United States)
J H English, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0881:
Optical Computing and Nonlinear Materials
Nasser Peyghambarian, Editor(s)

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