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Proceedings Paper

Molecular Beam Epitaxy Studies Of A-Sn/CdTe Superlattices
Author(s): Hartmut Hochst; David W. Niles; Isaac Hernandez-Calderon
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Paper Abstract

Angular-resolved synchrotron radiation photoemission spectroscopy and reflection high energy electron diffraction (RHEED) are used to study the MBE growth and the thermal stability of α-Sn/CdTe(110) and CdTe/α-Sn(110) interfaces. Both interfaces are found to be stable, nonreactive, and abrupt for growth temperatures up to 100 C. At the α-Sn/CdTe interface we measured a valence band offset of ΔEv = 1.1eV. Shifts in the Sn4d core level and valence band spectra suggest a bandgap in a 50 monolayer (ML) thick α-Sn film of at least ΔEg ≥ 200meV. Stable superlattices of α-Sn/CdTe(110) have been grown at 100 C. The surface quality of the superstructure degrades after the growth of several α-Sn/CdTe periods. After the growth of 10 periods each 50 ML thick, the RHEED pattern shows mainly three dimensional bulk diffraction, indicating increased surface and interface roughness.

Paper Details

Date Published: 3 May 1988
PDF: 6 pages
Proc. SPIE 0878, Multifunctional Materials, (3 May 1988); doi: 10.1117/12.943953
Show Author Affiliations
Hartmut Hochst, University of Wisconsin-Madison (United States)
David W. Niles, University of Wisconsin-Madison (United States)
Isaac Hernandez-Calderon, University of Wisconsin-Madison (United States)

Published in SPIE Proceedings Vol. 0878:
Multifunctional Materials
Robert L. Gunshor, Editor(s)

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