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Proceedings Paper

Growth And Characterization Of CdTe On GaAs/Si Substrates
Author(s): G Radhakrishnan; A Nouhi; J Liu
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Paper Abstract

Epitaxial CdTe has been grown on both (100) GaAs/Si and (111) GaAs/Si substrates. A combination of molecular beam epitaxy and metal organic chemical vapor deposition have been employed to achieve this growth. The GaAs layers are grown on Si substrates by molecular beam epitaxy, followed by the growth of CdTe on GaAs/Si substra by metalorganic chemical vapor deposition. X-ray diffraction, photoluminescence and scanning electron microscopy have been used to characterize the CdTe films.

Paper Details

Date Published: 18 May 1988
PDF: 3 pages
Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943935
Show Author Affiliations
G Radhakrishnan, California Institute of Technology (United States)
A Nouhi, California Institute of Technology (United States)
J Liu, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0877:
Micro-Optoelectronic Materials
Carl A. Kukkonen, Editor(s)

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