Share Email Print

Proceedings Paper

Electron-Beam Controlled Semiconductor Switches
Author(s): K. II. Schoenbach; V. K. Lakdawala; K. B.J. Schmitt; T. J. Powers
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A high power closing and opening bulk semiconductor switch is discussed where a high energy electron- beam (e- beam) is used to control the switch conductivity. The electrons are injected through a contact into the cathode region of a direct semiconductor switch. They generate a high concentration of electron-hole pairs over a distance of several micrometers to several hundred micrometers, depending on the electron energy. Ionization of the bulk of the semiconductor is provided by recombination radiation and X-ray Bremsstrahlung. The optical generation of an electron-hole plasma in the bulk region of the semiconductor switch overcomes the space charge limitation on the switch current and therefore allows external control of high current densities. Current and voltage measurements of e-beam irradiated semi-insulating GaAs samples were performed. A change of resistance of more than three orders of magnitude was obtained with e- beam current densities of some tens of mA/cm2, corresponding to current gains (switch current/e-beam current) of up to 600. Closing and opening times of less than 50 ns seem to be achievable with these GaAs switches. An improvement in current gain by more than an order of magnitude can be obtained by proper doping of the cathode region of the semiconductor switch.

Paper Details

Date Published: 6 April 1988
PDF: 7 pages
Proc. SPIE 0871, Space Structures, Power, and Power Conditioning, (6 April 1988); doi: 10.1117/12.943640
Show Author Affiliations
K. II. Schoenbach, Old Dominion University (United States)
V. K. Lakdawala, Old Dominion University (United States)
K. B.J. Schmitt, Old Dominion University (United States)
T. J. Powers, Old Dominion University (United States)

Published in SPIE Proceedings Vol. 0871:
Space Structures, Power, and Power Conditioning
Raymond F. Askew, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?