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Proceedings Paper

Gallium Arsenide Based Integrated Optoelectronic Circuits
Author(s): L D Hutcheson
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Paper Abstract

Integrated optoelectronic circuits consists of monolithically integrating high speed electronics with photonic devices such as light emitters and photodetectors on a common substrate. Requirements for optoelectronic integration are being driven by the needs of optical interconnects, optical communication, and optical computing and signal processing. During the past few years significant progress in this technology has been realized due to improvements in material growth, device processing and digital GaAs integrated circuit development. This paper will present a state-of-the-art review of this technology, its application to high speed systems and make projections for future developments.

Paper Details

Date Published: 31 March 1988
PDF: 11 pages
Proc. SPIE 0869, Technologies for Optoelectronics, (31 March 1988); doi: 10.1117/12.943613
Show Author Affiliations
L D Hutcheson, Raynet Corporation (United States)

Published in SPIE Proceedings Vol. 0869:
Technologies for Optoelectronics
Jean M. Bulabois; Roy F. Potter, Editor(s)

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