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Proceedings Paper

Photoluminescence Studies Of Epitaxial Layers In InGaAsP/InP And InGaAs/InP Heterostructures
Author(s): Wojciech Lewandowski; Bohdan Mroziewicz
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Paper Abstract

Photoluminescence spectra measured on angle lapped InGaAs/InP and InGaAsP/InP LPE grown heterostructures have been used to determine carrier concentration and composition profiles in the consecutive epitaxial layers. The results have been supported by the ones obtained by SIMS measurements. It was also found that the shape of the photoluminescence spectrum can give an information on the lattice mismatch between ternary and quaternary epitaxial layers and the InP substrate.

Paper Details

Date Published: 1 January 1987
PDF: 7 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943572
Show Author Affiliations
Wojciech Lewandowski, Institute of Electron Technology (Poland)
Bohdan Mroziewicz, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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