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Proceedings Paper

Developments In Insb Material And Charge Injection Devices
Author(s): M D Gibbons; S C Wang; S R Jost; V F Meikleham; T H Myers; A F Milton
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Paper Abstract

InSb has served as an important mid-wave IR (X=3-5pm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a function of material parameters. A new InSb materials technology utilizing liquid phase epitaxy will be described. This epitaxial growth technology improves InSb material parameters and increases minority carrier lifetimes by more than two orders of magnitude to near the Auger limit. Comparisons will be made between available bulk material parameters and that of the epitaxial material.

Paper Details

Date Published: 3 May 1988
PDF: 7 pages
Proc. SPIE 0865, Focal Plane Arrays: Technology and Applications, (3 May 1988); doi: 10.1117/12.943545
Show Author Affiliations
M D Gibbons, General Electric Company (United States)
S C Wang, General Electric Company (United States)
S R Jost, General Electric Company (United States)
V F Meikleham, General Electric Company (United States)
T H Myers, General Electric Company (United States)
A F Milton, General Electric Company (United States)

Published in SPIE Proceedings Vol. 0865:
Focal Plane Arrays: Technology and Applications
Jean-Pierre Chatard, Editor(s)

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