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Proceedings Paper

Field-Effect Transistors For Efficient Integrated Optoelectronic Sensors
Author(s): F Therez; M Fallahi; R Leguerre; D Esteve; D Kendil
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Paper Abstract

Integrated receivers associating an amplifier with a photodiode are studied. The field effect transistor used for the amplifier has been designed and characterized. The FET tran-sistor has been fabricated on a GaAs semi-insulating substrate using Liquid Phase Epitaxy. The structure consists of two epitaxial layers, i.e. one N-GaAs layer for the channel and a P-GaAlAs layer for the gate. The design, technological process and current-voltage characteristics are described. Transconductance values over 10 mA/V have been achieved and the transistor have shown a threshold voltage of -4.6 volts. Integrated receivers whose field effect transistor is associated with a photodiode, enhance the detector sensitivity. The results measured on the device show current gain of 15 with a photodiode load resistance set to 2 kSt... Optical sensitivity and current amplification better than 15 are found on transistors with a high doping level ND. The results shown by the FET will be applied to a type of sensor presenting static optical responsivity.

Paper Details

Date Published: 3 May 1988
PDF: 5 pages
Proc. SPIE 0865, Focal Plane Arrays: Technology and Applications, (3 May 1988); doi: 10.1117/12.943542
Show Author Affiliations
F Therez, C.N.R.S (France)
M Fallahi, C.N.R.S (France)
R Leguerre, C.N.R.S (France)
D Esteve, C.N.R.S (France)
D Kendil, C.N.R.S (France)

Published in SPIE Proceedings Vol. 0865:
Focal Plane Arrays: Technology and Applications
Jean-Pierre Chatard, Editor(s)

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