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Proceedings Paper

Optical Properties And Non Linearities In Multiple Quantum Well Structures
Author(s): J P Pocholle; M Razeghi; J P Hirtz; J P Schnell; J Raffy; B Guyon; M Papuchon; C Puech; P Dandria; H Vanderstichel
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Paper Abstract

The quantum well structures in semiconductor dominate many important application areas. Laser, loss modulator, optical bistable device, intersectionnal total reflection switch with high speed switching capabilities have been demonstrated. Polarization dependent absorption in waveguide structures, non linear transmission and voltage dependent absorption coefficient are investigated as a function of wavelength and quantum well structures. Results for GaAs/GaAlAs and InGaAs/InP Multiple Quantum Wells (MQW) structures are presented. Various device applications based on waveguide and 2D configurations are discussed.

Paper Details

Date Published: 2 June 1988
PDF: 10 pages
Proc. SPIE 0864, Advanced Optoelectronic Technology, (2 June 1988);
Show Author Affiliations
J P Pocholle, THOMSON-CSF (France)
M Razeghi, THOMSON-CSF (France)
J P Hirtz, THOMSON-CSF (France)
J P Schnell, THOMSON-CSF (France)
J Raffy, THOMSON-CSF (France)
B Guyon, THOMSON-CSF (France)
M Papuchon, THOMSON-CSF (France)
C Puech, THOMSON-CSF (France)
P Dandria, THOMSON-CSF (France)
H Vanderstichel, THOMSON-CSF (France)

Published in SPIE Proceedings Vol. 0864:
Advanced Optoelectronic Technology
Daniel B. Ostrowsky; Claude P. Puech, Editor(s)

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