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Proceedings Paper

Microwave-Frequency Intensity-Modulation And Gain-Switching In Semiconductor Injection Lasers
Author(s): Chinlon Lin
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Paper Abstract

This paper is a brief rev4.ew of the characteristics of semiconductor lasers under microwave-frequency direct intensity-modulation, and multi-gigahertz gain-switching. The role of biasdependent resonance frequency and -3 dB rolloff frequency in multi-gigabit/sec digital modulation is discussed. The intrinsic transient effects of spectral envelope broadening and dynamic line broadening (frequency-chirping) on the single-longitudinal-mode operation of high-speed directly modulated semiconductor lasers are also discussed.

Paper Details

Date Published: 1 November 1987
PDF: 10 pages
Proc. SPIE 0477, Optical Technology for Microwave Applications I, (1 November 1987); doi: 10.1117/12.942606
Show Author Affiliations
Chinlon Lin, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0477:
Optical Technology for Microwave Applications I
Shi-Kay Yao, Editor(s)

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