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Proceedings Paper

Detectors For Monolithic Optoelectronics
Author(s): D. J. Jackson; J. Y. Josefowicz; D. B . Rensch; D. L. Persechini
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Paper Abstract

In this paper, we present data on the electrical characteristics and the optical response of photodetectors integrated on GaAs substrates with FET devices. We compare the differences between devices fabricated on globally implanted areas versus the undoped semi-insulating regions of the same wafer.

Paper Details

Date Published: 4 February 1988
PDF: 5 pages
Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); doi: 10.1117/12.942561
Show Author Affiliations
D. J. Jackson, Hughes Research Laboratories (United States)
J. Y. Josefowicz, Hughes Research Laboratories (United States)
D. B . Rensch, Hughes Research Laboratories (United States)
D. L. Persechini, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0839:
Components for Fiber Optic Applications II
Vincent J. Tekippe, Editor(s)

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