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Proceedings Paper

Low Loss Optical Waveguides By Direct Ti Ion Implantation In LiNbO3
Author(s): Paul R. Ashley; Chris Buchal
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Paper Abstract

The maximum Ti concentration and corresponding An as well as the minimum waveguide size is limited in diffused waveguides by the diffusion coefficient. Ion implantation offers an interesting alternative with a clear advantage at larger wavelengths for smaller waveguide cross-sections. Both planar and channel waveguides have been fabricated by ion implantation of Ti into a LiNb03 substrate. A solid phase epitaxial regrowth of the implant induced crystal damage resulted in excellent waveguides with propagation losses of< 1 db/cm. Guide depth of <1 micron and An of 0.04 have been achieved. Fabrication techniques and optical properties of the waveguides are presented.

Paper Details

Date Published: 10 March 1988
PDF: 5 pages
Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942341
Show Author Affiliations
Paul R. Ashley, U.S. Army Missile Command (United States)
Chris Buchal, Oak Ridge National Laboratory (United States)

Published in SPIE Proceedings Vol. 0835:
Integrated Optical Circuit Engineering V
Mark A. Mentzer, Editor(s)

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