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Proceedings Paper

X-Ray Resist Characterization With Monochromatic Synchrotron Radiation
Author(s): R P Jaeger; P Pianetta
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Paper Abstract

The first monochromatic resist exposures in the photon energy range 1 to 3.5 keV were completed at the in-vacuum lithogrpaphy beam line at the Stanford Synchrotron Radiation Laboratory (SSRL). Layered synthetic microstructures (LSM) were used as monochromators. The exposure times of 200 k Poly(chloromethylstyrene) (PCMS) through a boron nitride supported gold absorber mask were below 20 minutes. The sensitivity increase of PCMS at the chlorine edge was clearly observed. A considerable non-uniformity of the beam image in the 10 -20 um range was related to imperfections in the LSM substrate.

Paper Details

Date Published: 18 June 1984
PDF: 6 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942338
Show Author Affiliations
R P Jaeger, Hewlett-Packard Laboratories (United States)
P Pianetta, Stanford University (United States)

Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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