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Proceedings Paper

The Effect Of Pressure To 4 GPa On The Photoluminescence Spectrum Of A Multiple Quantum Well P-I-N Diode
Author(s): Andrew D. Prins; John D. Lambkin; David J. Dunstan; Ian L. Spain
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Paper Abstract

The photoluminescence spectrum of a GaAs/GaAlAs multiple quantum well p-i-n diode has been measured as a function of pressure. Room temperature measurements were carried out in a diamond anvil cell to about 4 GPa (40 kbars), and at 77 K to about 0.8 GPa in a conventional high pressure apparatus. Shifts in photoluminescence peaks originating from the GaAlAs capping layer and two regions of the multiple quantum well layers of different thicknesses are discussed in terms of a model for the pressure shifts in the r and X-states of these components. A brief discussion of the emission intensities is also given.

Paper Details

Date Published: 10 March 1988
PDF: 9 pages
Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942334
Show Author Affiliations
Andrew D. Prins, University of Surrey (England)
John D. Lambkin, University of Surrey (England)
David J. Dunstan, University of Surrey (England)
Ian L. Spain, Colorado State University (United States)

Published in SPIE Proceedings Vol. 0835:
Integrated Optical Circuit Engineering V
Mark A. Mentzer, Editor(s)

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