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Proceedings Paper

Growth And Application Superlattices And Quantum Wells
Author(s): A. Torabi; K. F. Brennan; C. J. Summers
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Paper Abstract

New devices using ultra thin layers of GaAs/A1GaAs have been grown employing Molecular Beam Epitaxy (MBE) technology. Superlattice Avalanche Photodiodes SL-APD and Variably Spaced Superlattice Energy Filter (VSSEF) devices have been fabricated and the results are discussed.

Paper Details

Date Published: 10 March 1988
PDF: 5 pages
Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942332
Show Author Affiliations
A. Torabi, Georgia Institute of Technology (United States)
K. F. Brennan, Georgia Institute of Technology (United States)
C. J. Summers, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0835:
Integrated Optical Circuit Engineering V
Mark A. Mentzer, Editor(s)

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