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Proceedings Paper

Si MOSFET Fabrication Using Focused Ion Beams
Author(s): R L Kubena; J Y Lee; R A Jullens; R G. Brault; P L Middleton; E H Stevens
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Paper Abstract

Submicrometer focused ion beams have been used both for the maskless ion implantation of p-channel depletion-mode Si MOSFETs and for the gate lithography of n-channel enhancement-mode Si MOSFETs. B-Pt and Au-Si liquid-metal-alloy ion sources were utilized in a single-lens focusing column for the implantation and lithography steps, respectively. An 800-A-thick Al stopping layer was used at the target to separate the lighter ions from the heavier ion species in the beams. Reasonable dc electrical characteristics were measured for the chosen device process parameters.

Paper Details

Date Published: 18 June 1984
PDF: 6 pages
Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); doi: 10.1117/12.942315
Show Author Affiliations
R L Kubena, Hughes Research Laboratories (United States)
J Y Lee, Hughes Research Laboratories (United States)
R A Jullens, Hughes Research Laboratories (United States)
R G. Brault, Hughes Research Laboratories (United States)
P L Middleton, Hughes Research Laboratories (United States)
E H Stevens, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0471:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III
Alfred Wagner, Editor(s)

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