The electro-optical properties of n-i-p-i doping superlattices are very promising for device applications, Two distinct approaches towards modulating the absorption and the refraction by applying external voltages are identified, and calculated results for GaAs n-p superlattices are presented. The first method uses the injection and extraction of non-equilibrium charge carriers into the superlattice via selective contacts to the n- and p-type layers. The second approach makes use of the possibility to apply a uniform external electric field parallel to the growth direction via sandwich electrodes. It is shown that the two schemes differ substantially in their dynamic response.

Date Published: 19 February 1988
PDF: 6 pages
Proc. SPIE 0825, Spatial Light Modulators and Applications II, (19 February 1988); doi: 10.1117/12.941987

Published in SPIE Proceedings Vol. 0825:
Spatial Light Modulators and Applications II
Uzi Efron, Editor(s)