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Proceedings Paper

Fourier Transform Photoluminescence Analysis Of Semiconductor Materials
Author(s): W. M. Duncan; M. L. Eastwood
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Paper Abstract

In this paper we describe Fourier Transform Photoluminescence (FTPL) spectroscopy and discuss its application to three semiconductor systems: (i) indirect wide band gap silicon, (ii) direct wide band gap GaAs and (iii) direct narrow band gap semiconductors. Included in the discussion of each of these systems is background work carried out using conventional photoluminescence spectroscopy as well as new results from FTPL spectroscopy. Results from studies of semiconductor silicon are presented for quantitative trace impurity analysis and for analysis of processing induced microdefects. Application of FTPL to GaAs includes the identification of shallow impurities, defects and transition metal impurities. Finally, results from FTPL spectroscopic studies of InAs and InSb are presented to demonstrate the applicability of the method to narrow gap materials.

Paper Details

Date Published: 19 January 1988
PDF: 10 pages
Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); doi: 10.1117/12.941951
Show Author Affiliations
W. M. Duncan, Texas Instruments Incorporated (United States)
M. L. Eastwood, MIDAC Corporation (United States)

Published in SPIE Proceedings Vol. 0822:
Raman and Luminescence Spectroscopy in Technology
Fran Adar; James E. Griffiths, Editor(s)

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