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Proceedings Paper

Fourier Transform Infrared Photoluminescence
Author(s): Nelson L. Rowell
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Paper Abstract

A commercial Fourier transform spectrometer has been modified to measure recombinant radiation (photoluminescence) under argon laser excitation from semiconducting and insu-lating solid samples at low temperatures. The experimental method is described detailing the criteria for optimizing the instrumentation and the limitations of the technique. The photoluminescence of following materials was studied as a function of laser intensity and wavelength and at various temperatures: (a) the large gap, indirect semiconductors Si, Ge, and SizGei_x, (b) the amorphous semiconductor a-Si:H, (c) the large gap, di-rect semiconductors, GaAs, InP, CdTe and Ga,Ini_,As, (d) the narrow gap, direct semiconductor, InSb, and (e) the insulator, KZni_1Co1F3, an infrared laser material.

Paper Details

Date Published: 19 January 1988
PDF: 11 pages
Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); doi: 10.1117/12.941950
Show Author Affiliations
Nelson L. Rowell, National Research Council (Canada)

Published in SPIE Proceedings Vol. 0822:
Raman and Luminescence Spectroscopy in Technology
Fran Adar; James E. Griffiths, Editor(s)

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