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Proceedings Paper

Contrast Enhanced UV Lithography With Polysilanes
Author(s): Donald C. Hofer; Robert D. Miller; C.Grant Willson; Andrew R. Neureuther
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Paper Abstract

Contrast enhanced lithography has been been applied to mid-uv projection lithography with a new class of CEL materials, polysilanes. The nonlinear bleaching photochemistry of polysilanes provides a unique "bleaching latency" for contrast enhanced lithography. SAMPLE resist exposure and development simulation is compared with experimental CEL resist images using AZ2400® photoresist. The contrast enhancement gained with the use of polysilanes is examined as a function of exposure dose, image size, and contrast enhancement film thickness.

Paper Details

Date Published: 21 May 1984
PDF: 9 pages
Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); doi: 10.1117/12.941784
Show Author Affiliations
Donald C. Hofer, IBM Research Laboratory (United States)
Robert D. Miller, IBM Research Laboratory (United States)
C.Grant Willson, IBM Research Laboratory (United States)
Andrew R. Neureuther, University of California (United States)

Published in SPIE Proceedings Vol. 0469:
Advances in Resist Technology I
C. Grant Willson, Editor(s)

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