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Proceedings Paper

Optical Properties Of GaAs-GaAlAs Quantum Well Structures
Author(s): Ronald L. Greene; K. K Bajaj
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Paper Abstract

Interest in the study of optical properties associated with shallow impurity centers and Wannier excitons in superlattices and quantum well structures is fairly recent. This paper reviews briefly both the theoretical and experimental work done in this field in the last few years. Several recent calculations of the energy levels of hydrogenic impurity states and Wannier excitons in quantum well structures, such as Ga1-xAlxAs-GaAs-Ga 1-xAlxAs, assuming infinite and finite potential barriers at the interfaces are reviewed. The behavior of these levels as a function of the quantum well size is discussed. It is shown that the behavior of the energy states of these shallow systems in finite height potential wells is both qualitatively and quantitatively different from that in infinite height potential wells especially in thin (<100Å) wells. Recent experimental data concerning the variations of the binding energies of shallow acceptors and Wannier excitons as a function of the GaAs quantum well size is reviewed. A comparison between these experimental meas-urements and the results of recent calculations is presented.

Paper Details

Date Published: 31 May 1984
PDF: 12 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941357
Show Author Affiliations
Ronald L. Greene, University of New Orleans (United States)
K. K Bajaj, Air Force Wright Aeronautical Laboratories (United States)

Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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