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Proceedings Paper

Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0[sub]2[/sub] Interface
Author(s): J. H. Mazur; R. Gronsky; J. Washburn
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Paper Abstract

The structure of interfaces between silicon oxides grown in dry oxygen on singular and vicinal (111) surfaces of silicon has been studied using cross-sectional high resolution transmission electron microscopy. Crystalline silicon was found to terminate abruptly on (111) planes, where it transforms to amorphous Si02. One interplanar distance high ledges, separated by (111) terraces were found to be present on all surfaces studied. The width of the terraces was surface orientation dependent. It is suggested that such a structure of the interface can be explained by a terrace-ledge-kink model and that high temperature oxidation proceeds by a ledge mechanism similar to that for evaporation from the surface.

Paper Details

Date Published: 31 May 1984
PDF: 5 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941353
Show Author Affiliations
J. H. Mazur, University of California (United States)
R. Gronsky, University of California (United States)
J. Washburn, University of California (United States)

Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)

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