Proceedings Paper
An Indirect Plasma-Enhanced Chemical Vapor Deposition Technique For Gate Dielectrics| Format | Member Price | Non-Member Price |
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Paper Abstract
The growth of device quality Al203 dielectric films by an indirect plasma-enhanced CVD technique is described. The films were grown on InP using trimethylaluminum and nitrous oxide reactants in the range of 230-300°C. Direct exposure of substrate to the d.c. generated plasma was minimized by a novel reactor configuration. For optimum deposition conditions, stoichiometric films with indices of refraction between 1.65-1.67 were obtained. InP-M0S capacitors consisting of 1000° thick Al203 dielectric films and Al-metal field plates showed interface state densities in the range of 3x 1011cm-2 eV-1.
Paper Details
Date Published: 31 May 1984
PDF: 5 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941347
Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)
PDF: 5 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941347
Show Author Affiliations
K P. Pande, Bendix Aerospace Technology Center (United States)
D. Gutierrez, Bendix Aerospace Technology Center (United States)
Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)
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