Proceedings Paper
Electrical Characteristics Of Amorphous Ni[sub]36[/sub]W[sub]64[/sub] Contacts On Silicon| Format | Member Price | Non-Member Price |
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Paper Abstract
The Schottky barrier heights of amorphous Ni36W64 film contacts on n-type and p-type silicon are 0.65 eV and 0.45 eV, respectively. The barrier heights stay constant up to 550°C for a 30 min annealing in vacuum, but the interface, the leakage current, and the ideality factors degrade at 450°C. The contact resistivities of amorphous Ni-W films is (1.4 ± 0.3) 10-6 Ωcm2 on n+Si and (8.9 ± 0.2) 10-7 0cm2 on p+Si. The values remain stable after vacuum annealing for 30 min up to 600°C.
Paper Details
Date Published: 31 May 1984
PDF: 6 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941342
Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)
PDF: 6 pages
Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); doi: 10.1117/12.941342
Show Author Affiliations
M. F. Zhu, California Institute of Technology (United States)
I. Suni, California Institute of Technology (United States)
I. Suni, California Institute of Technology (United States)
M-A. Nicolet, California Institute of Technology (United States)
Published in SPIE Proceedings Vol. 0463:
Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
Carl M. Lampert; Devindra K. Sadana, Editor(s)
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