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Proceedings Paper

Optoelectronic And Optical Bistability In Si And InP SEED Devices
Author(s): Franz Forsmann; Dieter Jager
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Paper Abstract

At 1.06 µm optoelectronic and optical bistability and a clear multistability due to a self-electrooptic-effect is observed in hybrid Si and InP SEED devices. The nonlinearity is traced back to thermal effects which are largely enhanced by the electrical power input. Novel photodetector and modulator devices with high sensitivity and threshold characteristics are found. For a Si-Schottky diode a quantitative comparison with the thermal model and first dynamical measurements of the switch up process are presented.

Paper Details

Date Published: 22 September 1987
PDF: 6 pages
Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941205
Show Author Affiliations
Franz Forsmann, Universitat Munster (Germany)
Dieter Jager, Universitat Munster (Germany)

Published in SPIE Proceedings Vol. 0800:
Novel Optoelectronic Devices
M. J. Adams, Editor(s)

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