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Proceedings Paper

Proposal For A Low Threshold Current Long Wavelength Strained Layer Laser
Author(s): K. C. Heasman; E. P. O'Reilly; G. P. Witchlow; W. Batty; A. R. Adams
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Paper Abstract

We illustrate the benefits of strained layer structures for long wavelength lasers by considering a laser with 35Å InAs wells in GaAs. The lasing wavelength is close to 1.55μm. The built-in strain ensures that the highest hole band has a low effective mass over more than 3kT at room temperature, with the zone centre hole mass mh = .112. The reduced effective mass leads to the virtual elimination of the two major loss mechanisms in 1.55μm lasers, namely intervalence band absorption and Auger recombination. A threshold current density of Jth = 150 A cm-2 and a To of 120K can be achieved in a separate confinement laser with 3 wells. We conclude that a low threshold current, high efficiency, high To laser can be achieved in a suitable strained layer structure.

Paper Details

Date Published: 22 September 1987
PDF: 6 pages
Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941185
Show Author Affiliations
K. C. Heasman, University of Surrey (UK)
E. P. O'Reilly, University of Surrey (UK)
G. P. Witchlow, University of Surrey (UK)
W. Batty, University of Surrey (UK)
A. R. Adams, University of Surrey (UK)

Published in SPIE Proceedings Vol. 0800:
Novel Optoelectronic Devices
M. J. Adams, Editor(s)

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