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Proceedings Paper

GaAs-AlGaAs Multiple Quantum Well Structures And High-Power Lasers Grown By Metalorganic Vapor Phase Epitaxy (Movpe) In A Chimney Reactor.
Author(s): Fred Roozeboom; Andre Sikkema; Laurens W. Molenkamp
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Paper Abstract

GaAs/AlGaAs GRIN-SCH type multiple quantum well lasers with 4 wells of 11 nm GaAs, grown in an MOVPE chimney reactor, exhibit an output power as high as 110 mW/facet (CW, 30°C; 5 μm stripe) and 1.3 W/facet (pulsed, 30°C; 53 μm stripe) until catastrophic optical damage occurs. 2000 hours life tests conducted at 60°C and 15 mW CW show no noticeable degradation for the 5 μm stripe laser with a reflective coating on both facets. Raman spectroscopy on similar multiple quantum well structures with 65 GaAs wells is used to ascertain that the wells have minimum residual aluminum-content.

Paper Details

Date Published: 22 September 1987
PDF: 7 pages
Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941181
Show Author Affiliations
Fred Roozeboom, Philips Research Laboratories (The Netherlands)
Andre Sikkema, Philips Research Laboratories (The Netherlands)
Laurens W. Molenkamp, Philips Research Laboratories (The Netherlands)

Published in SPIE Proceedings Vol. 0800:
Novel Optoelectronic Devices
M. J. Adams, Editor(s)

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